Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation
نویسندگان
چکیده
This paper presents a new electro-thermal coupling simulation method for evaluating the reliability of IGBT modules, which combines numerical power loss model and finite element model. To illustrate method, specific case Infineon FF50R12RT4 module operated with an SPWM signal is considered. Temperature stress data are obtained analyzed via simulation, service life modules calculated accordingly. The influence ambient temperature gate characteristics on discussed, can be used optimization work points. In this effect junction considered, more accurate achieved. proposed to analyze thermal mechanical stresses predict failure location, assess life.
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ژورنال
عنوان ژورنال: Electronics
سال: 2023
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics12092116